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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET ARY IMIN PREL e. tion. cifica t to chang c al spe t a fins are subje is no limit is e: Th tric Notice parame Som FY8BCH-02F FY8BCH-02F HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FY8BCH-02F OUTLINE DRAWING Dimensions in mm 6.4 4.4 3.0 1.1 0.275 0.65 q 2.5V DRIVE q VDSS .................................................................................. 20V q rDS (ON) (MAX) .............................................................. 16m q ID ........................................................................................... 8A SOURCE GATE DRAIN TSSOP8 APPLICATION Li - ion battery protection MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Conditions VGS = 0V VDS = 0V Ratings 20 10 8 56 8 1.5 6.0 1.6 -55 ~ +150 -55 ~ +150 Unit V V A A A A A W C C g Sep. 2000 L = 10H Typical value 0.035 MITSUBISHI Nch POWER MOSFET IMIN PREL . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY FY8BCH-02F HIGH-SPEED SWITCHING USE (Tch = 25C) ELECTRICAL CHARACTERISTICS Symbol Parameter Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 10V, VDS = 0V VDS = 20V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 4V ID = 4A, VGS = 2.5V ID = 8A, VGS = 4V ID = 8A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 20 10 -- -- 0.5 -- -- -- -- -- -- -- -- Typ. -- -- -- -- 0.9 13 17 0.104 -- 1800 -- -- -- -- -- -- 0.85 -- 50 Max. -- -- 10 0.1 1.5 16 22 0.128 -- -- -- -- -- -- -- -- 1.1 78.1 -- Unit V V A mA V m m V S pF pF pF ns ns ns ns V C/W ns V (BR) DSS Drain-source breakdown voltage V (BR) GSS Gate-source breakdown voltage IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 10V, ID = 4A, VGS = 4V, RGEN = RGS = 50 -- -- -- -- -- -- IS = 1.5A, VGS = 0V Channel to ambient IS = 1.5A, dis/dt = -50A/s Sep. 2000 |
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